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Quantum Capacitance Enhancement of AlN Nanoribbon Via Transition Metal Doping: Density Functional Study | ||
| Progress in Physics of Applied Materials | ||
| دوره 6، شماره 3 - شماره پیاپی 12، دی 2026، صفحه 217-227 اصل مقاله (1.11 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22075/ppam.2025.39297.1176 | ||
| نویسندگان | ||
| Keyvan Moradian Koochaksaraei؛ Majid Vaezzadeh* | ||
| Department of Solid-State Physics, Faculty of Physics, K. N. Toosi University of Technology, Tehran, Iran | ||
| تاریخ دریافت: 15 مهر 1404، تاریخ بازنگری: 04 دی 1404، تاریخ پذیرش: 07 دی 1404 | ||
| چکیده | ||
| First-principles density-functional calculations are used to explore the influence of transition-metal dopants (Sc, Ti, V, Mn, Fe, Co) on the electronic structure, stability and quantum capacitance (QC) of zig-zag AlN nanoribbons. Substitutional doping at either the edge or center of the ribbon is found to introduce mid-gap states that markedly increase the density of states near the Fermi level, yielding up to a 40-fold enhancement in QC related to the pristine lattice. Vanadium-doped configurations possess the highest cohesive energy (−5.85 eV per atom) and the largest surface-charge density (40 µC cm⁻² at +0.6 V vs −0.6 V), identifying them as optimal anode materials. Conversely, cobalt-rich ribbons deliver superior cathodic capacity, whereas Mn-doped systems exhibit almost symmetric charge storage. Phonon spectra confirm dynamic stability for all considered dopants. The results provide quantitative design rules for tailoring of AlN nanoribbons as high-rate, high-capacity electrodes in advanced supercapacitors. | ||
| کلیدواژهها | ||
| Quantum Capacitance؛ DFT؛ AlN Nanoribbon؛ Transition Metal Doping؛ Surface Charge Density؛ Anode؛ Cathode Applications | ||
| مراجع | ||
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آمار تعداد مشاهده مقاله: 11 تعداد دریافت فایل اصل مقاله: 21 |
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