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A comparative study of two types of substrates in the manufacture of Schottky diode: p-Si and n- Si | ||
| International Journal of Nonlinear Analysis and Applications | ||
| مقاله 109، دوره 13، شماره 1، خرداد 2022، صفحه 1303-1310 اصل مقاله (587.51 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22075/ijnaa.2022.5680 | ||
| نویسندگان | ||
| Hussam Muhsin Hwail* 1؛ Manal Midhat2 | ||
| 1Department of Physics, University of Kufa, Najaf,Iraq. | ||
| 2Department of Physics, University of Baghdad, Al-Jadria, Baghdad, Iraq. | ||
| تاریخ دریافت: 28 اردیبهشت 1400، تاریخ بازنگری: 12 مهر 1400، تاریخ پذیرش: 29 مهر 1400 | ||
| چکیده | ||
| This paper includes description of fabrication and characterization of two Schottky diodes differ in substrate material (n-type and p-type black Silicon). Schottky diodes were composed of (Ag /B-Si/n-Si/Al and Ag/B-Si/p-Si/ Al) respectively. Etching was achieved both electrochemical and photo--electrochemical etching processes. Different etching times and etching current densities were applied. Ag for front contact and Al for back contact were deposited by thermal evaporation method. I-V characteristics were plotted for the diode in dark forward and backward biasing at room temperature. The ideality factor and barrier height values were obtained. The barrier height values was(0,33-0,36) eV and the saturation current values (6,86-7,05) for the diode samples were obtained from the current-voltage (I-V) curves , The ideality factor (\textit{n})\textbf{ } values was(27.47-35.61), Schottky diodes at the Ag/BS or the dual metal-semiconductor junctions (Ag/BS/c-Si and c- Si/Al), of a diode ideally exhibit Ohmic features). | ||
| کلیدواژهها | ||
| Mathematics؛ Black Silicon؛ schottky diode؛ Electrochemical Etching؛ photo-electrochemical etching؛ Ideality Factor؛ Schottky barrier | ||
| مراجع | ||
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