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The fluctuations of Zn impurity Concentration Profile in KCl crystals growth by various pulling rate Czochralski method | ||
| Progress in Physics of Applied Materials | ||
| دوره 3، شماره 1 - شماره پیاپی 4، بهمن 2023، صفحه 43-47 اصل مقاله (545.18 K) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22075/ppam.2023.30941.1056 | ||
| نویسندگان | ||
| Heidar Faripour* 1؛ Elham Khodadoost2؛ Yasaman Faripour2 | ||
| 1Nuclear Strategic Studies Research School, Photonic and quantum technology research school, Tehran, Iran | ||
| 2lian parto fan gostar co., Tehran,Iran | ||
| تاریخ دریافت: 27 خرداد 1402، تاریخ بازنگری: 21 مرداد 1402، تاریخ پذیرش: 30 مرداد 1402 | ||
| چکیده | ||
| Single crystals of KCl(Zn) using different amounts of Zn impurity (0.5 and 1.0 mole percents) with and without rotating crucible were grown by Czochralski method. The speed of rotation and pulling rate of the seed crystal were adjusted at, 10 rpm and 12 mm per hour respectively. The crucible was rotated, in the opposite direction of crystal rotation, with 5 rpm. Crystals, with Zn impurity of 0.5 % grown by both rotating and fixed crucible, were found to be transparent and uniform. Since the KCl crystals with Zn impurity of 1% were not transparent, they were found not suitable for optics. Furthermore, it was observed that the upper and middle parts of the crystals grown with 1 mol% Zn impurity are more transplant but the lower part includes transplant and cloudy layers. The results show that a convenient rotation and pulling rate can improve the stability and uniformity of impurity distribution along the crystals. | ||
| کلیدواژه‌ها | ||
| Impurities؛ Czochralski method؛ Alkali- Halides | ||
| مراجع | ||
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[1] A. Jackson, A. Kenneth, Kenetic Processes, Wiley-VCH Verlay GmbH & Co. KGaA, Weinheim, 2004. [2] F. Rosenberger, G. H. Westphal, "Low-Stress Physical Vapor Growth." Journal of Crystal Growth 43 (1978) 148-152. [3] S. M. Pimputkar, S. Ostrach, "Convective Effects in Crystals Grown from Melt." Journal of Crystal Growth 55 (1981) 614-646. [4] H. J. Scheel, T. Fukuda, crystal growth technology, 2003. [5] J.J. Favier, L.O. Wilson, "A test of the boundary layer model in unsteady Czochralski growth." Journal of crystal growth 58 (1982)103-110. [6] L.O. Wilson, "The Effect of Fluctuating Growth Rates on Segregation in Crystals Grown from the Melt." Journal of crystal growth 48(1980) 435-450. [7] R. NOWAK, E. FORNALIK, J. GRONIAK, "Experimental analysis of velocity and temperature fields in a system similar to the Czochralski method of single crystal growth." archives of thermodynamics 29 (2008). [8] K. Lal and A.R. Verma, "sophisticated equipment developed for growth and evaluation of perfection of nearly perfect crystals," Bulletin of Materials Science 6 (1984)129-149. [9] R. Pereze –Salas,TM.Piters, "optical vibronic spectra of aggregates in Eudoped KCl and KBr crystals." Revista mexicana de fisica 49 (2003)102-106. [10] K. Sangwal, Eching of Crystals, North Holland,1987. | ||
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