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Expanded Channel in the SOI MESFET by SiGe Regions to Improve the Current Capability and High-Frequency Features | ||
| Modeling and Simulation in Electrical and Electronics Engineering | ||
| دوره 2، شماره 3 - شماره پیاپی 9، بهمن 2022، صفحه 47-55 اصل مقاله (2.25 M) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22075/mseee.2023.31272.1128 | ||
| نویسندگان | ||
| Behrooz Fath-Gangi1؛ Ali Mir* 1؛ Ali Naderi2؛ Reza Talebzadeh3؛ Ali Farmani3 | ||
| 1Electronic Engineering, Faculty of Engineering, Lorestan University, Khoram-Abad, Iran. | ||
| 2Faculty of Engineering, Imam Khomeini International University, Ghazvin, Iran. | ||
| 3Faculty of Engineering, Lorestan University, Khoram-Abad, Lorestan, Iran. | ||
| تاریخ دریافت: 25 تیر 1402، تاریخ بازنگری: 09 شهریور 1402، تاریخ پذیرش: 22 شهریور 1402 | ||
| چکیده | ||
| In this paper, a novel structure for silicon on insulator metal semiconductor field effect transistors (SOI MESFETs) is introduced using the heterogeneous Si/SiGe region. SiGe semiconductor is used to expand the effective width of the drift region inside the buried oxide (BOX) layer. Due to its properties such as high electron mobility, high electron drift velocity, and excellent radio frequency (RF) performance, it significantly increases the current density of drain and other DC and RF parameters. Also, to control the critical electric field, which determines the breakdown voltage of the device, as well as to reduce the parasitic capacitance to improve its frequency characteristics, an additional oxide region between the gate and drain and below a part of the gate region is used. Numerical simulation shows that the drain current density and breakdown voltage of the proposed device compared to the conventional structure has been improved by 120% and 37%, respectively, resulting in a 2 times increase in maximum output power density (Pmax). Also, the RF specifications of the new structure, including current gain (h21), unilateral power gain (U), and maximum available power gain (MAG), have been improved by 130%, 85%, and 65%, respectively. These specifications are proper for a device in high power and RF circuits like D-band applications. | ||
| کلیدواژه‌ها | ||
| Breakdown voltage؛ Current density؛ Electric field؛ Frequency characteristics؛ Maximum output power density؛ SOI MESFET | ||
| مراجع | ||
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