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طراحی ترانزیستور اثر میدانی تونلی بدون پیوند ناهمگن همراه شده با فناوری Silicon-on-Nothing برای بهبود مشخصات DC | ||
| مدل سازی در مهندسی | ||
| دوره 22، شماره 76، اردیبهشت 1403، صفحه 45-53 اصل مقاله (1.29 M) | ||
| نوع مقاله: مقاله برق | ||
| شناسه دیجیتال (DOI): 10.22075/jme.2023.29572.2392 | ||
| نویسندگان | ||
| امین ونک1؛ امیر امینی* 2 | ||
| 1دانشجوی دکتری دانشکده مهندسی برق، دانشگاه آزاد اسلامی تهران غرب، تهران، ایران | ||
| 2دانشیار دانشکده مهندسی برق، دانشگاه آزاد اسلامی تهران غرب، تهران، ایران | ||
| تاریخ دریافت: 21 دی 1401، تاریخ بازنگری: 27 تیر 1402، تاریخ پذیرش: 12 شهریور 1402 | ||
| چکیده | ||
| دراین مقاله، ترانزیستور اثر میدانی تونلی بدون پیوند ناهمگن همراه شده با تکنولوژی silicon-on-nothing (SON HS-JLTFET) پیشنهاد می‌شود. ترانزیستور پیشنهادی در مقایسه با ترانزیستور تونل‌زنی بدون پیوند مرسوم دو مزیت دارد. اولین مزیت، یک دهه افزایش در جریان روشنی و بهبود 10 درصدی نوسانات زیر آستانه است که بخاطر استفاده از InAs در ناحیه‌ی سورس می‌باشد. InAs به دلیل انرژی شکاف باند کمتری که نسبت به Si دارد سبب پهنای سد تونل‌زنی کمتر در پیوند سورس/کانال می‌شود. لذا الکترون های بیشتری از سورس به کانال تونل زنی میکنند. در نتیجه سبب افزایش نرخ تونل‌زنی و بهبود در جریان روشنی و نوسان زیر آستانه می‌شود. مزیت دیگر شامل کاهش جریان ambipolar به کمک تکنیک SON است. در واقع، air به دلیل ثابت دی الکتریک کمتری که نسبت به اکسید SiO2 دارد میدان الکتریکی را در پیوند درین/کانال کاهش می‌دهد.میدان کاهش یافته سبب پهنای سد بزرگتری می‌شود. لذا جریان ambipolar را کاهش می‌دهد. | ||
| کلیدواژه‌ها | ||
| ترانزیستور تونل‌زنی؛ نوسانات زیر آستانه؛ جریان ambipolar؛ ساختار ناهمگن | ||
| عنوان مقاله [English] | ||
| A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement | ||
| نویسندگان [English] | ||
| Amin Vanak1؛ Amir Amini2 | ||
| 1Doctoral student, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran. | ||
| 2Associate Professor, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran. | ||
| چکیده [English] | ||
| In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is improved by 10%. In this device, InAs is used in the source region of SON HS-JLTFET which has a lower energy band gap than Si to achieve thinner tunneling barrier width. Hence, more electron can tunnel from source to channel. As a result, it provides improvements in drain current and subthreshold swing. The second advantage is that the ambipolar current reduction due to the use of SON technique. In fact, in this technique, air is considered as the gate dielectric which results in decrement in the electric field in the drain/channel junction. This reduced electric field causes increasing the width of the tunneling barrier which results in lower ambipolar current in the drain/channel junction. . | ||
| کلیدواژه‌ها [English] | ||
| Tunnel field effect, Transistor, Subthreshold swing, Ambipolar current, Heterostructure | ||
| مراجع | ||
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