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N+ Pocket Core-Shell Nanotube Tunnel Field-Effect Transistor | ||
| Modeling and Simulation in Electrical and Electronics Engineering | ||
| دوره 1، شماره 4 - شماره پیاپی 6، اردیبهشت 2022، صفحه 27-31 اصل مقاله (882.97 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22075/mseee.2022.24935.1080 | ||
| نویسندگان | ||
| Amirsam Abad* 1؛ Iman Chahardah Cherik2؛ Saeed Mohammadi2 | ||
| 1Electrical engineering department of Amirkabir university, Tehran 1591634311, Iran | ||
| 2Department of Electrical and Computer Engineering,Semnan University, Semnan 3513119111, Iran | ||
| تاریخ دریافت: 26 مهر 1400، تاریخ بازنگری: 29 دی 1400، تاریخ پذیرش: 18 اسفند 1400 | ||
| چکیده | ||
| One of the attractive candidates for improving the performance of tunnel transistors is cylindrical structures due to their impressive electrostatic control of the gate. But the on-state current of tunnel transistors is still very low compared to MOSFETs. An alternative is to use core-shell nanotubes rather than nanowires. In this article, we present a core-shell TFET nanotube based on a heterogeneous germanium/silicon structure. In our proposed structure, an N+ pocket is employed to enhance the on-state current. A possible manufacturing method is also proposed that is fully compatible with CMOS technology. The main parameters of this transistor are 97.85 μA / μm on-state current, Ion / Ioff ratio of 8.26×108, SSavg mV/dec 21.15, and fT of 878.95 GHz. | ||
| کلیدواژه‌ها | ||
| Tunnel FET؛ germanium-source؛ core-shell nanotube؛ heterojunction؛ on-state current | ||
| مراجع | ||
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