Khairuddin, Nur Syahirah, Mohd Yusoff, Mohd Zaki, Hussin, Hanim. (1405). PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells. هنرهای کاربردی, 6(3), 193-204. doi: 10.22075/ppam.2026.39563.1183
Nur Syahirah Khairuddin; Mohd Zaki Mohd Yusoff; Hanim Hussin. "PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells". هنرهای کاربردی, 6, 3, 1405, 193-204. doi: 10.22075/ppam.2026.39563.1183
Khairuddin, Nur Syahirah, Mohd Yusoff, Mohd Zaki, Hussin, Hanim. (1405). 'PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells', هنرهای کاربردی, 6(3), pp. 193-204. doi: 10.22075/ppam.2026.39563.1183
Khairuddin, Nur Syahirah, Mohd Yusoff, Mohd Zaki, Hussin, Hanim. PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells. هنرهای کاربردی, 1405; 6(3): 193-204. doi: 10.22075/ppam.2026.39563.1183

PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells

Progress in Physics of Applied Materials
دوره 6، شماره 3 - شماره پیاپی 12، زمستان 2026، صفحه 193-204    اصل مقاله (1.3 M)
نوع مقاله: Original Article
شناسه دیجیتال (DOI): 10.22075/ppam.2026.39563.1183
نویسندگان
Nur Syahirah Khairuddin1؛ Mohd Zaki Mohd Yusoff* 1، 2، 3؛ Hanim Hussin4
1School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
2Institute for Biodiversity and Sustainable Development (IBSD), Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
3Institute of Sciences (IOS), Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
4School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
چکیده
In this research, indium gallium nitride (InGaN), gallium nitride (GaN), and silicon (Si) were combined to develop a heterojunction solar cell with optimal results using the Personal Computer One Dimensional (PC1D) simulation. This research investigates the impact of structural and design parameters, specifically; thickness and doping, on the performance of InGaN solar cells. The electrical properties of these solar cells were examined to determine their optimum conditions. Based on the findings, appropriate layer thickness, doping concentration, and operation temperature, all together contribute to enhance electron mobility and solar cell efficiency (η). The quantum efficiency at the highest temperature is the lowest among all the temperatures, resulting in poor photon absorption. Furthermore, η decreases with increasing temperature, from 25.13% at 300 K to 6.04% at 550 K. The InGaN solar cells demonstrated a short-circuit current (Isc) of 39.45 mA/cm², an open-circuit voltage (Voc) of 0.7464 V, a maximum power output (Pmax) of 0.2529 W, a fill factor (FF) of 85.89%, and an efficiency of 25.29%, showing improvements compared to previous works.
کلیدواژه‌ها
InGaN؛ GaN؛ Si؛ Quantum efficiency؛ PC1D
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