A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications | ||
| Journal of Modeling and Simulation in Electrical and Electronics Engineering | ||
| مقاله 2، دوره 1، شماره 1 - شماره پیاپی 3، تابستان 2021، صفحه 7-12 اصل مقاله (594.45 K) | ||
| نوع مقاله: Research Article | ||
| شناسه دیجیتال (DOI): 10.22075/mseee.2018.334.1012 | ||
| نویسندگان | ||
| Hadi Shahnazarisani؛ Ali Asghar Orouji* | ||
| Semnan University | ||
| چکیده | ||
| This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulation results show that the proposed structure has an excellent effect on the driving current. The breakdown voltage of the INL-SOI MESFET structure gets a 33.33% enhancement when compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency, and maximum available gain have been evaluated and improved in the proposed structure. | ||
| کلیدواژهها | ||
| maximum available gain؛ maximum oscillation frequency؛ silicon on insulator (SOI)؛ MESFET | ||
| مراجع | ||
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