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بهبود عملکرد ترانزیستور تونل زنی عمودی مبتنی بر ژرمانیوم با بهکارگیری GaAs به عنوان کانال | ||
| مدل سازی در مهندسی | ||
| دوره 22، شماره 76، اردیبهشت 1403، صفحه 115-122 اصل مقاله (1.16 M) | ||
| نوع مقاله: مقاله پژوهشی | ||
| شناسه دیجیتال (DOI): 10.22075/jme.2023.26379.2231 | ||
| نویسندگان | ||
| شعیب بابایی توسکی1؛ محمد جواد رضایی2؛ سید منوچهر حسینی* 3 | ||
| 1استادیار، دانشکده مهندسی برق، دانشگاه صنعتی همدان، همدان، ایران | ||
| 2دانشجو، دانشکده مهندسی برق، دانشگاه صنعتی همدان، همدان، ایران | ||
| 3استاد، دانشکده مهندسی برق، دانشگاه بوعلی سینا، همدان، ایران | ||
| تاریخ دریافت: 13 اسفند 1400، تاریخ بازنگری: 14 فروردین 1402، تاریخ پذیرش: 09 مهر 1402 | ||
| چکیده | ||
| در این مقاله ترانزیستور تونلزنی عمودی مبتنی بر ژرمانیوم بررسی شدهاست. ویژگیهای الکتریکی ترانزیستور در دو حالت استفاده از ژرمانیوم و همچنین استفاده از گالیوم-آرسناید به عنوان کانال مقایسه شده و شبیهسازی آن توسط نرمافزار سیلواکو و با استفاده از مدل تونلزنی غیر محلی انجام شدهاست. نتایج نشان میدهد که جریان روشنایی بیشتر، جریان خاموشی کمتر و جریان دوقطبی درین کمتر در ولتاژ گیت منفی از مزایای استفاده از گالیوم-آرسناید به جای ژرمانیوم به عنوان کانال است. در ادامه، پارامترهای کانال تغییر داده شدهاند و اثر تغییر آنها بر روی رفتار ترانزیستور مطالعه شدهاست. افزایش طول کانال باعث کاهش جریان خاموشی و افزایش نسبت جریان روشنایی به خاموشی شده و همچنین باعث کاهش شیب زیرآستانه میشود. از طرف دیگر، افزایش عرض کانال، باعث کاهش نسبت جریان روشنایی به خاموشی و افزایش شیب زیرآستانه میشود. نسبت جریان روشنایی به خاموشی با افزایش طول کانال و کاهش عرض کانال افزایش مییابد و این نسبت میتواند تا 15+10×5/1 افزایش پیدا کند. | ||
| کلیدواژهها | ||
| ترانزیستور عمودی؛ تونل زنی؛ سیلواکو؛ ژرمانیوم؛ گالیوم-آرسناید؛ جریان روشنایی؛ جریان خاموشی | ||
| عنوان مقاله [English] | ||
| Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel | ||
| نویسندگان [English] | ||
| Shoaib Babaei tooski1؛ Mohammad Javad Rezaei2؛ Seyed Manoochehr Hoseini3 | ||
| 1Assistant Professor, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran | ||
| 2MSc, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran | ||
| 3Professor, Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran | ||
| چکیده [English] | ||
| In this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared. The simulation of this transistor was performed by Silvaco software using non-local tunneling model. The results show that more ON-current, less OFF-current and less bipolar current at negative gate voltage are the advantages of using Gallium Arsenide instead of Germanium as the channel. In the following, the channel parameters are changed and the effect of their change on the behavior of the transistor is studied. Increasing the channel length reduces the Off-current and increases the On-current to Off-current ratio, as well as reducing the sub-threshold slope. On the other hand, increasing the channel width reduces On-current to Off-current ratio and increases the sub-threshold slope. The On-current to Off-current ratio increases with increasing channel length and decreasing channel width, and increases to 1.5 × 10 + 15. . | ||
| کلیدواژهها [English] | ||
| Vertical transistor, Tunneling, Silvaco, Germanium, Gallium arsenide, On-current, Off-Current | ||
| مراجع | ||
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