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Modeling of Drain Current in Double-Gate Heterojunction Tunneling FETs: a Physical-Analytical Approach | ||
| Modeling and Simulation in Electrical and Electronics Engineering | ||
| مقاله 1، دوره 1، شماره 3 - شماره پیاپی 5، بهمن 2021، صفحه 1-7 اصل مقاله (1019.61 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22075/mseee.2021.23186.1057 | ||
| نویسندگان | ||
| Danial Keighobadi؛ Saeed Mohammadi* | ||
| Department of Electrical Engineering, Semnan University, Semnan, Iran | ||
| تاریخ دریافت: 29 فروردین 1400، تاریخ بازنگری: 18 خرداد 1400، تاریخ پذیرش: 21 شهریور 1400 | ||
| چکیده | ||
| In this paper, we develop an analytical potential model for the double-gate Heterostructure Tunneling Field-Effect Transistors (H-TFETs) to accurately predict the electrostatic potential profile of the device in all regions of operation. Using the potential model, we present appropriate relations for the tunneling distance at a specified energy level in the bandgap of the tunneling junction. Finally, based on the highest tunneling rate formalism, the minimum tunneling distance is employed to calculate the tunneling current, which is the dominant on-state current flow mechanism in the H-TFETs. We show that our models closely match the results obtained by numerical simulations, for various heterostructure devices with different material systems in a wide range of operation, from subthreshold to super threshold. | ||
| کلیدواژه‌ها | ||
| Analytical modeling؛ band-to-band tunneling؛ double-gate heterostructure tunnel field-effect transistor (H-TFET)؛ Drain Current | ||
| مراجع | ||
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آمار تعداد مشاهده مقاله: 243 تعداد دریافت فایل اصل مقاله: 275 |
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